Generic interface for an optical metrology system

ABSTRACT

An optical metrology system includes a photometric device with a source configured to generate and direct light onto a structure, and a detector configured to detect light diffracted from the structure and to convert the detected light into a measured diffraction signal. A processing module of the optical metrology system is configured to receive the measured diffraction signal from the detector to analyze the structure. The optical metrology system also includes a generic interface disposed between the photometric device and the processing module. The generic interface is configured to provide the measured diffraction signal to the processing module using a standard set of signal parameters. The standard set of signal parameters includes a reflectance parameter, a first polarization parameter, a second polarization parameter, and a third polarization parameter.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. Ser. No. 11/471,892, titledGENERIC INTERFACE FOR AN OPTICAL METROLOGY SYSTEM, filed Jun. 20, 2006,now issued as U.S. Pat. No. 7,271,902, which is a continuation of U.S.Ser. No. 10/394,327, titled GENERIC INTERFACE FOR AN OPTICAL METROLOGYSYSTEM, filed Mar. 20, 2003, now issued as U.S. Pat. No. 7,064,829, allof which are incorporated herein by reference in their entireties.

BACKGROUND

1. Field of the Invention

The present invention relates to wafer metrology, and more particularlyto optical metrology.

2. Related Art

Optical metrology involves directing an incident beam at a structure,measuring the resulting diffraction beam, and analyzing the diffractionbeam to determine various characteristics, such as the profile of thestructure. In semiconductor manufacturing, optical metrology istypically used for quality assurance. For example, after fabricating aperiodic grating in proximity to a semiconductor chip on a semiconductorwafer, an optical metrology system is used to determine the profile ofthe periodic grating. By determining the profile of the periodicgrating, the quality of the fabrication process utilized to form theperiodic grating, and by extension the semiconductor chip proximate theperiodic grating, can be evaluated.

Optical metrology systems can use various types of photometric devices,which include a light source and a detector capable of detecting theintensity of the diffracted light and converting the light intoelectrical signals. Conventional photometric devices used in opticalmetrology systems include reflectometers, which measures the change inthe intensity of light, and ellipsometers, which measure the change inthe intensity and polarization states of light. Additionally, varioustypes of reflectometers (such as polarized reflectometers, unpolarizedreflectometers, and the like) and ellipsometers (such as rotatingpolarizer ellipsometers (RPEs), rotating compensator ellipsometers(RCEs), phase modulated ellipsometers (PMEs), and the like) can be used.

While these various types of photometric devices convert light intoelectrical signals, each photometric device can provide the electricalsignals as measured diffraction signals using various signal parameters.For example one type of reflectometer can provide measured diffractionsignals using different signal parameters than another type ofreflectometer. Additionally, two reflectometers that are the same typebut made by different manufacturers can provide measured diffractionsignals using different signal parameters. Thus, in conventional opticalmetrology systems, the hardware and software used to analyze themeasured diffraction signals received from a photometric device areconfigured or calibrated to work with the particular photometric devicebeing used, which can be time and cost prohibitive.

SUMMARY

In one exemplary embodiment, an optical metrology system includes aphotometric device with a source configured to generate and direct lightonto a structure, and a detector configured to detect light diffractedfrom the structure and to convert the detected light into a measureddiffraction signal. A processing module of the optical metrology systemis configured to receive the measured diffraction signal from thedetector to analyze the structure. The optical metrology system alsoincludes a generic interface disposed between the photometric device andthe processing module. The generic interface is configured to providethe measured diffraction signal to the processing module using astandard set of signal parameters. The standard set of signal parametersincludes a reflectance parameter, a first polarization parameter, asecond polarization parameter, and a third polarization parameter.

DESCRIPTION OF DRAWING FIGURES

The present invention can be best understood by reference to thefollowing description taken in conjunction with the accompanying drawingfigures, in which like parts may be referred to by like numerals:

FIG. 1 depicts an exemplary optical metrology system;

FIGS. 2A-2E depict exemplary profiles of an exemplary periodic grating;

FIG. 3 depicts an exemplary source; and

FIG. 4 depicts an exemplary generic interface between a photometricdevice and a processing module of the exemplary optical metrology systemdepicted in FIG. 1.

DETAILED DESCRIPTION

The following description sets forth numerous specific configurations,parameters, and the like. It should be recognized, however, that suchdescription is not intended as a limitation on the scope of the presentinvention, but is instead provided as a description of exemplaryembodiments.

1. Optical Metrology

With reference to FIG. 1, an optical metrology system 100 can be used toexamine and analyze a structure. For example, optical metrology system100 can be used to determine the profile of a periodic grating 102formed on wafer 104. As described earlier, periodic grating 102 can beformed in test areas on wafer 104, such as adjacent to a device formedon wafer 104. Alternatively, periodic grating 102 can be formed in anarea of the device that does not interfere with the operation of thedevice or along scribe lines on wafer 104.

As depicted in FIG. 1, optical metrology system 100 can include aphotometric device with a source 106 and a detector 112. Periodicgrating 102 is illuminated by an incident beam 108 from source 106. Inthe present exemplary embodiment, incident beam 108 is directed ontoperiodic grating 102 at an angle of incidence θ_(i) with respect tonormal {right arrow over (n)} of periodic grating 102 and an azimuthangle Φ (i.e., the angle between the plane of incidence beam 108 and thedirection of the periodicity of periodic grating 102). Diffracted beam110 leaves at an angle of θ_(d) with respect to normal {right arrow over(n)} and is received by detector 112. Detector 112 converts thediffracted beam 110 into a measured diffraction signal.

To determine the profile of periodic grating 102, optical metrologysystem 100 includes a processing module 114 configured to receive themeasured diffraction signal and analyze the measured diffraction signal.As described below, the profile of periodic grating 102 can then bedetermined using a library-based process or a regression-based process.Additionally, other linear or non-linear profile extraction techniquesare contemplated.

2. Library-Based Process of Determining Profile of Structure

In a library-based process of determining the profile of a structure,the measured diffraction signal is compared to a library of simulateddiffraction signals. More specifically, each simulated diffractionsignal in the library is associated with a hypothetical profile of thestructure. When a match is made between the measured diffraction signaland one of the simulated diffraction signals in the library or when thedifference of the measured diffraction signal and one of the simulateddiffraction signals is within a preset or matching criterion, thehypothetical profile associated with the matching simulated diffractionsignal is presumed to represent the actual profile of the structure. Thematching simulated diffraction signal and/or hypothetical profile canthen be utilized to determine whether the structure has been fabricatedaccording to specifications.

Thus, with reference again to FIG. 1, in one exemplary embodiment, afterobtaining a measured diffraction signal, processing module 114 thencompares the measured diffraction signal to simulated diffractionsignals stored in a library 116. Each simulated diffraction signal inlibrary 116 can be associated with a hypothetical profile. Thus, when amatch is made between the measured diffraction signal and one of thesimulated diffraction signals in library 116, the hypothetical profileassociated with the matching simulated diffraction signal can bepresumed to represent the actual profile of periodic grating 102.

The set of hypothetical profiles stored in library 116 can be generatedby characterizing a hypothetical profile using a set of parameters, thenvarying the set of parameters to generate hypothetical profiles ofvarying shapes and dimensions. The process of characterizing a profileusing a set of parameters can be referred to as parameterizing.

For example, as depicted in FIG. 2A, assume that hypothetical profile200 can be characterized by parameters h1 and w1 that define its heightand width, respectively. As depicted in FIGS. 2B to 2E, additionalshapes and features of hypothetical profile 200 can be characterized byincreasing the number of parameters. For example, as depicted in FIG.2B, hypothetical profile 200 can be characterized by parameters h1, w1,and w2 that define its height, bottom width, and top width,respectively. As depicted in FIG. 2C, hypothetical profile 200 can becharacterized by parameters h, w1, w2, w3, t1, and p1. As depicted FIG.2D, hypothetical profile 200 can be characterized by parameters h, w1,w2, w3, w4, p1, and p2. As depicted in FIG. 2E, hypothetical profile 200can be characterized by parameters h1, h2, w1, w2, w3, w4, p1, and d1.Note that the width of hypothetical profile 200 can be referred to asthe critical dimension (CD). For example, in FIG. 2B, parameter w1 andw2 can be described as defining the bottom CD and top CD, respectively,of hypothetical profile 200.

As described above, the set of hypothetical profiles stored in library116 (FIG. 1) can be generated by varying the parameters thatcharacterize the hypothetical profile. For example, with reference toFIG. 2B, by varying parameters h1, w1, and w2, hypothetical profiles ofvarying shapes and dimensions can be generated. Note that one, two, orall three parameters can be varied relative to one another.

With reference again to FIG. 1, the number of hypothetical profiles andcorresponding simulated diffraction signals in the set of hypotheticalprofiles and simulated diffraction signals stored in library 116 (i.e.,the resolution and/or range of library 116) depends, in part, on therange over which the set of parameters and the increment at which theset of parameters are varied. In one exemplary embodiment, thehypothetical profiles and the simulated diffraction signals stored inlibrary 116 are generated prior to obtaining a measured diffractionsignal from an actual structure. Thus, the range and increment (i.e.,the range and resolution) used in generating library 116 can be selectedbased on familiarity with the fabrication process for a structure andwhat the range of variance is likely to be. The range and/or resolutionof library 116 can also be selected based on empirical measures, such asmeasurements using AFM, X-SEM, and the like.

For a more detailed description of a library-based process, see U.S.patent application Ser. No. 09/907,488, titled GENERATION OF A LIBRARYOF PERIODIC GRATING DIFFRACTION SIGNALS, filed on Jul. 16, 2001, whichis incorporated herein by reference in its entirety.

3. Regression-Based Process of Determining Profile of Structure

In a regression-based process of determining the profile of a structure,the measured diffraction signal is compared to a simulated diffractionsignal (i.e., a trial diffraction signal). The simulated diffractionsignal is generated prior to the comparison using a set of parameters(i.e., trial parameters) for a hypothetical profile (i.e., ahypothetical profile). If the measured diffraction signal and thesimulated diffraction signal do not match or when the difference of themeasured diffraction signal and one of the simulated diffraction signalsis not within a preset or matching criterion, another simulateddiffraction signal is generated using another set of parameters foranother hypothetical profile, then the measured diffraction signal andthe newly generated simulated diffraction signal are compared. When themeasured diffraction signal and the simulated diffraction signal matchor when the difference of the measured diffraction signal and one of thesimulated diffraction signals is within a preset or matching criterion,the hypothetical profile associated with the matching simulateddiffraction signal is presumed to represent the actual profile of thestructure. The matching simulated diffraction signal and/or hypotheticalprofile can then be utilized to determine whether the structure has beenfabricated according to specifications.

Thus, with reference again to FIG. 1, in one exemplary embodiment,processing module 114 can generate a simulated diffraction signal for ahypothetical profile, and then compare the measured diffraction signalto the simulated diffraction signal. As described above, if the measureddiffraction signal and the simulated diffraction signal do not match orwhen the difference of the measured diffraction signal and one of thesimulated diffraction signals is within a preset or matching criterion,then processing module 114 can iteratively generate another simulateddiffraction signal for another hypothetical profile. In one exemplaryembodiment, the subsequently generated simulated diffraction signal canbe generated using an optimization algorithm, such as globaloptimization techniques, which includes simulated annealing, and localoptimization techniques, which includes steepest descent algorithm.

In one exemplary embodiment, the simulated diffraction signals andhypothetical profiles can be stored in a library 116 (i.e., a dynamiclibrary). The simulated diffraction signals and hypothetical profilesstored in library 116 can then be subsequently used in matching themeasured diffraction signal.

For a more detailed description of a regression-based process, see U.S.patent application Ser. No. 09/923,578, titled METHOD AND SYSTEM OFDYNAMIC LEARNING THROUGH A REGRESSION-BASED LIBRARY GENERATION PROCESS,filed on Aug. 6, 2001, which is incorporated herein by reference in itsentirety.

4. Rigorous Coupled Wave Analysis

As described above, simulated diffraction signals are generated to becompared to measured diffraction signals. In one exemplary embodiment,simulated diffraction signals can be generated by applying Maxwell'sequations and using a numerical analysis technique to solve Maxwell'sequations, such as rigorous coupled-wave analysis (RCWA). It should benoted, however, that various numerical analysis techniques, includingvariations of RCWA, can be used. For a more detail description of RCWA,see U.S. patent application Ser. No. 09/770,997, titled CACHING OFINTRA-LAYER CALCULATIONS FOR RAPID RIGOROUS COUPLED-WAVE ANALYSES, filedon Jan. 25, 2001, which is incorporated herein by reference in itsentirety.

5. Generic Interface

As noted earlier, with reference again to FIG. 1, optical metrologysystem 100 can use various types of photometric devices, which canprovide measured diffraction signals to processing module 114 usingvarious signal parameters. For example, if the photometric device is arotating analyzer ellipsometer (RAE), then the measured diffractionsignals provided to processing module 114 may include normalized Fouriercoefficient parameters such as alpha and beta parameters. Alternatively,if the photometric device is a rotating compensator ellipsometer (RCE),then the measured diffraction signals provided to processing module 114may include Ψ and Δ parameters. Examples of alpha and beta parametersand Ψ and Δ parameters are described in the examples and theorydiscussed below.

Additionally, in some applications, using certain signal parameters mayprovide limited or incomplete information to analyze the measureddiffraction signals. For example, with reference to FIG. 3, source 106can include a light source 302, a collimator 304, and a focusing element306 to focus the beam to form a small spot size. As depicted in FIG. 3,when the beam is focused, the angle of incidence is cone shaped and theΨ and Δ are not uniquely defined, as Ψ and Δ are a function of angle ofincidence. Thus, using only the Ψ and Δ may provide incompleteinformation to analyze the measured diffraction signals.

With reference to FIG. 4, in one exemplary embodiment, a genericinterface 402 is disposed between a photometric device 404 andprocessing module 114. Although generic interface 402 is depicted inFIG. 4 as a separate component, it should be recognized that genericinterface 402 can be a component of either photometric device 404 orprocessing module 114. Additionally, generic interface 402 can beimplemented in hardware, software, or a combination of hardware andsoftware.

As described above, photometric device 404 includes a source configuredto generate and direct light onto a structure, and a detector configuredto detect light diffracted from the structure and to convert thedetected light into a measured diffraction signal. The processing moduleis configured to receive the measured diffraction signal fromphotometric device 404, and more particularly the detector, to analyzethe structure, such as determining the profile of the structure.

As also described above, various types of photometric devices 404 can beused, which provide measured diffraction signals using various signalparameters. Thus, in the present exemplary embodiment, generic interface402 is configured to provide the measured signal to processing module114 using a standard set of signal parameters. More specifically, thestandard set of signal parameters includes a reflectance parameter thatcharacterizes the change in intensity of light when reflected on thestructure, and a polarization parameter that characterizes the change inpolarization states of light when reflected on the structure.

Thus, when photometric device 404 is a reflectometer that only measuresthe change in the intensity of light, such as a spectrometerreflectometer, generic interface 402 provides the measured diffractionsignal to processing module 114 using only the reflectance parameter ofthe standard set of signal parameters. When photometric device 404 is anellipsometer that measures both the change in the intensity of light andpolarization states of light, such as a rotating compensatorellipsometer (RCE), generic interface 402 provides the measureddiffraction signal to processing module 114 using the reflectanceparameter and the polarization parameter of the standard set of signalparameters.

In the present exemplary embodiment, the reflectance parameter (R) ofthe standard set of signal parameters corresponds to an average of thesquare of the absolute value of the complex reflection coefficients ofthe light. The polarization parameter includes a first parameter (N)that characterizes a difference between the square of the absolute valueof the complex reflection coefficients normalized to R, a secondparameter (S) that characterizes the imaginary component of theinterference of the two complex reflection coefficients normalized to R,and a third parameter (C) that characterizes the real component of theinterference of the two complex reflection coefficients normalized to R.Thus, the standard set of signal parameters includes the parameters (R,NSC).

When incident light is, for example, 45 degree linear polarized withintensity I₀, the parameters (1, N, S, C)×R×I₀ correspond to Stokesparameters of the diffracted light. More specifically, when the inputStokes parameters S₀, S₁, S₂, and S₃ are I_(0,) 0, I₀, and 0,respectively, then the output Stokes parameters S₀ corresponds to R×I₀,S₁ corresponds to negative N×R×I₀, S₂ corresponds to C×R×I₀, and S₃corresponds to negative S×R×I₀.

As described above, in one exemplary embodiment, in a library-basedprocess of determining the profile of a structure, the measureddiffraction signal is compared to a library of simulated diffractionsignals. Thus, in the present exemplary embodiment, the library ofsimulated diffraction signals is indexed using the standard set ofsignal parameters (R, NSC). It should be recognized that the simulateddiffraction signals in the library can be indexed such that each of theparameters in the standard set of signal parameters are independent.Alternatively, one or more of the parameters can be normalized to one ormore of the other parameters in the standard set of signal parameters toreduce the size of the library.

As also described above, in one exemplary embodiment, in aregression-based process of determining the profile of a structure, themeasured diffraction signal is compared to a simulated diffractionsignal and if the two signals do not match, another simulateddiffraction signal is generated. Thus, in the present exemplaryembodiment, the simulated diffraction signals can be generated based onthe standard set of signal parameters (R, NSC). For example, parametersNSC may be related to tan Ψ and cos Δ as described below with respect toequations (4) and (5).

6. Theory

The following description provides a more theoretical explanation forusing a standard set of data signal parameters as a generic interfacefor photometric devices.

More particularly, when the system is configured to eliminatepolarization cross coupling effects of the sample by techniques wellknown in the art, the measured diffraction signals of a photometricdevice can be characterized using four independent signal parameters,namely the complex reflection coefficients (CRCs) r_(s) and r_(p).Because the absolute phase is generally of less interest and difficultyto measure, only three signal parameters are typically used. However, inpractice, photometric devices typically have limited spectrum, time,and/or spatial resolutions. Thus, the measured diffraction signalsinclude an integration of measured diffraction signals over theseresolution ranges, which can result in a loss of degree of polarization(DOP). Thus, for a practical photometric device, one more signalparameter is needed to characterize the depolarization, e.g., adepolarization parameter. Thus, a total of four independent signalparameters are typically used to characterize the measured diffractionsignals from photometric devices in practice.

The four independent Stokes parameters (S₀ S₁ S₂ S₃) are commonly usedto characterize the polarization states of light in optical instrument.The Stokes parameters are related to the coherency matrix by thefollowing relationship:(S ₀ S ₁ S ₂ S ₃)=(J _(xx) +J _(yy) J _(xx) −J _(yy) J _(xy) +J _(yx)i(J _(yx) −J _(xy)))  (1)(See “Principles of Optics,” M. Born and E. Wolf, Cambridge UniversityPress, Chapter X, which is incorporated herein by reference in itsentirety.)

The relationship of the Stokes parameters (S₀ S₁ S₂ S₃) to the commonlyused ellipsometry parameters ρ=tan ψe^(iΔ) can be expressed as:(S ₀ S ₁ S ₂ S ₃)=I ₀ R(1−cos 2ψ sin 2ψ cos Δ sin 2ψ sin Δ)  (2)

$\begin{matrix}{{{where}\text{:~~}\rho} = {{\tan\;\psi\;{\mathbb{e}}^{{\mathbb{i}}\;\Delta}} = {\frac{R_{p}}{R_{s}} = {\frac{E_{p\; 0}}{E_{s\; 0}}.}}}} & (3)\end{matrix}$(See P. S. Hauge, R. H. Muller, and C. G. Smith, Conventions andFormulas for Using the Mueller-Stockes calculus in Ellipsometry, SurfaceScience, 96 (1980), 81-107, which is incorporated herein by reference inits entirety.)

For different types of photometric devices, the measured diffractionsignals can be expressed as a linear combination of the 4 components ofthe Stokes parameter. (See “Recent Developments in Instrumentation inEllipsometry,” P. S. Hauge, IBM Tomas J. Watson Research Center,Yorktown Heights, N.Y., 10598, USA, 1979, which is incorporated hereinby reference in its entirety.)

For example, unpolarized reflectometers typically characterize measureddiffraction signals using one Stokes parameter, i.e., S₀. Polarizedreflectometers typically characterize measured diffraction signals usingtwo Stokes parameters, i.e., (S₀ S₁). Rotating polarizer ellipsometers(RPEs) typically characterize measured diffraction signals using threeStokes parameters, i.e., (S₀ S₁ S₂). Rotating compensator ellipsometers(RCEs) typically characterize measured diffraction signals using allfour Stokes parameters, i.e., (S₀ S₁ S₂ S₃). (See “Recent Developmentsin Instrumentation in Ellipsometry,” P. S. Hauge, IBM Tomas J. WatsonResearch Center, Yorktown Heights, N.Y., 10598, USA, 1979, which isincorporated herein by reference in its entirety.)

The ellipsometer parameters (ρ=tan ψe^(iΔ)) can be generalized usingthree parameters (NSC) to characterize complicated effects. In thesimplest case, when there is no depolarization, this relationship can beexpressed as:(N S C)=(cos 2ψ sin 2ψ sin Δ sin 2ψ cos Δ)  (4)and√{right arrow over (N ² +S ² +C ²)}≡β=1.  (5)(See G. E. Jellison Jr., Optical materials 1 (1992) 41-47, which isincorporated herein by reference in its entirety.)

However, as noted above, photometric devices used in optical metrologyof semiconductor structures typically use focused beams to produce smallspot sizes (in the order of μm). Thus, for a photometric device thatuses a focused beam, the measured diffraction signal is the integrationof the measured diffraction signals corresponding to all the pencil raysin the effective numerical aperture (NA) of the photometric device. Eachpencil ray in the NA corresponds to a specific angle of incident (AOI)and wavelength. Additionally, the square of the absolute value of thecomplex reflection coefficients (CRCs), r_(s) and r_(p), and thus theparameters (R, NSC), are functions of angle of incident (AOI), where Ris the reflectivity defined below. Because of the dependence on AOI, thefocusing beam is depolarized.

Thus, in general, the ellipsometer parameters (ρ=tan ψe^(iΔ)) are nolonger sufficient to describe the characteristics of the focused beam.Additionally, in general, the definitions in equations (2)-(5) need tobe reconsidered, and one can expect that the expression √{square rootover (N²+S²+C²)}≡β may no longer equal 1. Moreover, depolarization isnot only limited by NA integration, it also can be the result of finitespectral resolution or other effects.

For an exemplary photometric device, the measured diffraction signalscan be characterized by the following relationship:I=PSD·M·PSG  (6)where PSD is the row vector representing the response of thepolarization state detector 112 to the Stokes parameters of polarizedlight, PSG is the column vector representing Stokes parameters of thelight created by the polarization generator 106, and M is the Mullermatrix. The vectors PSD and PSG are not a function of AOI andwavelength. (See G. E. Jellison Jr., Thin Solid Films 290-291(1996),40-45, which is incorporated herein by reference in its entirety.)

For a specific pencil ray (with given AOI and wavelength), the Mullermatrix can be written as:

$\begin{matrix}{{M\left( {{AOI},\lambda} \right)} = {\begin{pmatrix}{{Rp} + {Rs}} & {{Rp} - {Rs}} & 0 & 0 \\{{Rp} - {Rs}} & {{Rp} + {Rs}} & 0 & 0 \\0 & 0 & {{Re}({Rsp})} & {{Im}({Rsp})} \\0 & 0 & {- {{Im}({Rsp})}} & {{Re}({Rsp})}\end{pmatrix}.}} & (7)\end{matrix}$where Rs, p=|r_(s,p)|², Rsp=r_(s)r_(p)* and r_(s), r_(p) are the complexreflection coefficients.

For a photometric device using a focused beam, the measured diffractionsignals are the intensity integration of all the pencil rays over the NAand detector bandwidth around the center wavelength of the photometricdevice. This integration can be done solely for the Muller matrix asfollows:I=∫I(AOI, λ)dΩ _(AOI) dλ=PSD·(∫M(AOI, λ)dΩ _(AOI) dλ)·PSG.  (8)

Then, the generalized parameters (R, NSC) can be defined as follows:

$\begin{matrix}{R = \frac{\int{\left( {{Rp} + {Rs}} \right){\mathbb{d}\Omega_{AOI}}{\mathbb{d}\lambda}}}{2{\int{{\mathbb{d}\Omega_{AOI}}{\mathbb{d}\lambda}}}}} & (9) \\{N = {- \frac{\int{\left( {{Rp} - {Rs}} \right){\mathbb{d}\Omega_{AOI}}{\mathbb{d}\lambda}}}{\int{\left( {{Rp} + {Rs}} \right){\mathbb{d}\Omega_{AOI}}{\mathbb{d}\lambda}}}}} & (10) \\{S = \frac{\int{{{Im}({Rps})}{\mathbb{d}\Omega_{AOI}}{\mathbb{d}\lambda}}}{\int{\left( {{Rp} + {Rs}} \right){\mathbb{d}\Omega_{AOI}}{\mathbb{d}\lambda}}}} & (11) \\{C = {\frac{\int{{{Re}({Rps})}{\mathbb{d}\Omega_{AOI}}{\mathbb{d}\lambda}}}{\int{\left( {{Rp} + {Rs}} \right){\mathbb{d}\Omega_{AOI}}{\mathbb{d}\lambda}}}.}} & (12)\end{matrix}$

The above measurement and analysis procedure of equations (8)-(12) areperformed around the center wavelength of the photometric device, andthe results form a spectrum of I and (R, N, S, C). The photometricdevice may measure the center wavelengths one at a time, or measure allcenter wavelengths in parallel. The generic interface and signalprocessing module may convert and process the measured spectra when datafor a portion of the center wavelengths is available, or after the dataof all center wavelengths is available.

As can be seen from above, R characterizes the change in intensity oflight when reflected on a structure. More particularly, R is an averageof the square of the absolute value of the complex reflectioncoefficients. NSC characterizes the change in polarization states oflight when reflected on the structure. More particularly, N is thenormalized differences between the reflectivity. S is the imaginarycomponent, and thus the out-of-phase component, of the interference ofthe square of the absolute value of the complex reflection coefficientsnormalized to R. C is the real component, and thus the in-phasecomponent, of the interference of the square of the absolute value ofthe complex reflection coefficients normalized to R.

Additionally, when a 45 degree linear polarized light is used, and thusthe input Stokes parameters are S₀=1, S₁=0, S₂=1, and S₃=0, then theoutput stokes parameters correspond to R, NSC as S₀=R, S₁=−R×N, S₂=R×C,and S₃=−R×S.

With equations (9)-(12), the normalized Muller matrix can be expressedas:

$\begin{matrix}{M^{\prime} = {\begin{pmatrix}1 & {- N} & 0 & 0 \\{- N} & 1 & 0 & 0 \\0 & 0 & C & S \\0 & 0 & {- S} & C\end{pmatrix}.}} & (13)\end{matrix}$

Thus, the measured diffraction signals can be characterized as:I=PSD·(RM′)·PSG.  (14)

Note that in general, √{square root over (N²+S²+C²)}≡β≦1, and (R, NSC)are four (4) independent parameters. Additionally, note that the datasignal can be separated into hardware dependent and sample dependentterms, where PSD and PSG are hardware dependent only, and R and M′ aresample dependent only.

Additionally, because R and M′ are not hardware dependent and therelationship between R, M′ and the data signal is linear, R and M′, andthus R and NSC, can be extracted from the measured diffraction signals,and can be used without detailed hardware information.

The parameters (R, NSC) can describe completely the reflectioncharacteristics of isotropic structures, such as thin film, but they donot describe polarization cross coupling that exists in anisotropicstructures, such as periodic gratings. However, using an azimuth angleof 90° eliminates the contribution of polarization cross couplingeffects.

The parameters R and M′, or equivalently (R, NSC), are functions of theconditions that are measured such as the center AOI, center wavelength,effective NA, spectral resolution, and the like. From the definition ofthe parameters R and M′, or equivalently (R, NSC), these quantities canbe simulated for fitting, when we have the information about AOI, centerwavelength, effective NA and spectral resolution. The fitting can bedone using techniques of either library-based and/or Regression-basedprocesses.

The foregoing descriptions of specific embodiments of the presentinvention have been presented for purposes of illustration anddescription. They are not intended to be exhaustive or to limit theinvention to the precise forms disclosed, and it should be understoodthat many modifications and variations are possible in light of theabove teaching.

1. An optical metrology system, comprising: a processing module; and ageneric interface connected to the processing module, wherein thegeneric interface is configured to provide a measured diffraction signalto the processing module using a standard set of signal parameterscomprising: a reflectance parameter that characterizes the change inintensity of light when reflected on a structure; a first polarizationparameter that characterizes the difference between the square of theabsolute value of complex reflection coefficients and is an average overdepolarization effects and normalized to the reflectance parameter; asecond polarization parameter that characterizes an imaginary componentof an interference of the complex reflection coefficients and is anaverage over the depolarization effects, and normalized to thereflectance parameter; and a third polarization parameter thatcharacterizes a real component of an interference of the complexreflection coefficients and is an average over the depolarizationeffects, and normalized to the reflectance parameter.
 2. The system ofclaim 1, wherein when incident light is 45 degree linear polarized lightand a first input Stokes parameter is one intensity, a second inputStokes parameter is zero, a third Stokes parameter is one intensity, anda fourth input Stokes parameter is zero, then a first output Stokesparameter is the reflectance parameter multiplied by the first inputStokes parameter, a second output Stokes parameter is negative of thefirst polarization parameter multiplied by the first input Stokesparameter and reflectance parameter, a third output Stokes parameter isthe third polarization parameter multiplied by the first input Stokesparameter and reflectance parameter, and a fourth output Stokesparameter is negative of the second polarization parameter multiplied bythe first input Stokes parameter and reflectance parameter.
 3. Thesystem of claim 1, wherein the reflectance parameter is an average ofthe square of the absolute value of the complex reflection coefficientsand is an average over the depolarization effects, wherein thedepolarization effects include numerical aperture and spectrumbandwidth.
 4. The system of claim 1, wherein the processing module isconfigured to: compare the measured diffraction signal received from thegeneric interface to a first simulated diffraction signal; and when thedifference of the measured diffraction signal and the first simulateddiffraction signal is not within a matching criterion: generate a secondsimulated diffraction signal, and compare the measured diffractionsignal to the second simulated diffraction signal.
 5. The system ofclaim 1, wherein the generic interface is configured to operate with afirst type of photometric device and a second type of photometric deviceusing the standard set of signal parameters.
 6. The system of claim 1further comprising: a library of simulated diffraction signals; whereinthe processing module is configured to compare the measured diffractionsignal received from the generic interface to one or more simulateddiffraction signals stored in the library to determine a profile of thestructure.
 7. The system of claim 6, wherein the library of simulateddiffraction signals is indexed by one or more of the standard set ofsignal parameters.
 8. The system of claim 5, wherein the first type ofphotometric device is a reflectometer, and wherein the generic interfaceprovides the measured diffraction signal received from the reflectometerusing only the reflectance parameter of the standard set of signalparameters.
 9. The system of claim 8, wherein the second type ofphotometric device is an ellipsometer, and wherein the generic interfaceprovides the measured diffraction signal received from the ellipsometerusing both the reflectance parameter and the first, second, and thirdpolarization parameters of the standard set of signal parameters.
 10. Amethod of examining a structure using an optical metrology system,comprising: obtaining a measured diffraction signal from a genericinterface, wherein the measured diffraction signal is defined using astandard set of signal parameters comprising: a reflectance parameterthat characterizes the change in intensity of light when reflected onthe structure; a first polarization parameter that characterizes thedifference between the square of the absolute value of complexreflection coefficients and is an average over depolarization effectsand normalized to the reflectance parameter; a second polarizationparameter that characterizes an imaginary component of an interferenceof the complex reflection coefficients and is an average over thedepolarization effects, and normalized to the reflectance parameter; anda third polarization parameter that characterizes a real component of aninterference of the complex reflection coefficients and is an averageover the depolarization effects, and normalized to the reflectanceparameter; comparing the measured diffraction signal to one or moresimulated diffraction signals, the one or more simulated diffractionsignals defined using the standard set of signal parameters; anddetermining one or more characteristics of the structure based on thecomparison of the measured diffraction signal to the one or moresimulated diffraction signals.
 11. The method of claim 10, wherein whenincident light is 45 degree linear polarized light and a first inputStokes parameter is one intensity, a second input Stokes parameter iszero, a third Stokes parameter is one intensity, and a fourth inputStokes parameter is zero, then a first output Stokes parameter is thereflectance parameter multiplied by the first input Stokes parameter, asecond output Stokes parameter is negative of the first polarizationparameter multiplied by the first input Stokes parameter and reflectanceparameter, a third output Stokes parameter is the third polarizationparameter multiplied by the first input Stokes parameter and reflectanceparameter, and a fourth output Stokes parameter is negative of thesecond polarization parameter multiplied by the first input Stokesparameter and reflectance parameter.
 12. The method of claim 10, whereinthe reflectance parameter is an average of the square of the absolutevalue of the complex reflection coefficients and is an average over thedepolarization effects, wherein the depolarization effects includenumerical aperture and spectrum bandwidth.
 13. The method of claim 10,wherein comparing the measured diffraction signal to one or moresimulated diffraction signals comprises: compare the measureddiffraction signal to a first simulated diffraction signal; and when thedifference of the measured diffraction signal and the first simulateddiffraction signal is not within a matching criterion: generate a secondsimulated diffraction signal, and compare the measured diffractionsignal to the second simulated diffraction signal.
 14. The method ofclaim 10, wherein the generic interface is configured to operate with afirst type of photometric device and a second type of photometric deviceusing the standard set of signal parameters.
 15. The method of claim 10,wherein the one or more simulated diffraction signals are stored in alibrary of simulated diffraction signals.
 16. The method of claim 14,wherein the first type of photometric device is a reflectometer, whereinthe measured diffraction signal is defined using only the reflectanceparameter of the standard set of signal parameters when thereflectometer is used with the generic interface, wherein the secondtype of photometric device is an ellipsometer, and wherein the measureddiffraction signal is defined using both the reflectance parameter andthe first, second, and third polarization parameters of the standard setof signal parameters when the ellipsometer is used with the genericinterface.
 17. The method of claim 15, wherein the library of simulateddiffraction signals is indexed by one or more of the standard set ofsignal parameters.
 18. A computer-readable storage medium containingcomputer executable instructions for causing a computer to examine astructure using an optical metrology system, comprising instructions forobtaining a measured diffraction signal from a generic interface,wherein the measured diffraction signal is defined using a standard setof signal parameters comprising: a reflectance parameter thatcharacterizes the change in intensity of light when reflected on thestructure; a first polarization parameter that characterizes half of thedifference between the square of the absolute value of complexreflection coefficients and is an average over depolarization effectsand normalized to the reflectance parameter; a second polarizationparameter that characterizes an imaginary component of an interferenceof the complex reflection coefficients and is an average over thedepolarization effects, and normalized to the reflectance parameter; anda third polarization parameter that characterizes a real component of aninterference of the complex reflection coefficients and is an averageover the depolarization effects, and normalized to the reflectanceparameter; comparing the measured diffraction signal to one or moresimulated diffraction signals, the one or more simulated diffractionsignals defined using the standard set of signal parameters; anddetermining one or more characteristics of the structure based on thecomparison of the measured diffraction signal to the one or moresimulated diffraction signals.
 19. The computer-readable storage mediumof claim 18, wherein when incident light is 45 degree linear polarizedlight and a first input Stokes parameter is one intensity, a secondinput Stokes parameter is zero, a third Stokes parameter is oneintensity, and a fourth input Stokes parameter is zero, then a firstoutput Stokes parameter is the reflectance parameter multiplied by thefirst input Stokes parameter, a second output Stokes parameter isnegative of the first polarization parameter multiplied by the firstinput Stokes parameter and reflectance parameter, a third output Stokesparameter is the third polarization parameter multiplied by the firstinput Stokes parameter and reflectance parameter, and a fourth outputStokes parameter is negative of the second polarization parametermultiplied by the first input Stokes parameter and reflectanceparameter.
 20. The computer-readable storage medium of claim 18, whereinthe reflectance parameter is an average of the square of the absolutevalue of the complex reflection coefficients and is an average over thedepolarization effects, wherein the depolarization effects includenumerical aperture and spectrum bandwidth.